SIR-563ST3F sensors 1/3 infrared light emitting diode, top view type SIR-563ST3F the SIR-563ST3F is a gaas infrared light emitting diode housed in clear plastic. this device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. it has a wide radiation angle and is ideal for compact optical control equipment. ! ! ! ! applications optical control equipment light source for remote control devices ! ! ! ! features 1) high efficiency, high output p o = 11.0mw (i f = 50ma). 2) wide radiation angle 1/2 = 15deg. 3) emission spectrum well suited to silicon detectors. ( p = 940nm). 4) good current-optical output linearity. 5) long life, high reliability. ! ! ! ! external dimensions (units : mm) 2 ? 0.5 min.24 8.7 0.3 2.5 1 max.1 1 5.0 0.2 6 0.3 (2.5) 4 ? 0.6 notes: 1. unspecified tolerance shall be 0.2. 2. dimension in parenthesis are show for reference. 1 1 anode 2 2 cathode ! ! ! ! absolute maximum ratings (ta = 25 c) parameter symbol p d i f i fp ? v r topr tstg limits ? 25~ + 85 ? 40~ + 85 100 5.0 160 1.0 unit ma v mw a c c forward current reverse voltage power dissipation pulse forward current operating temperature storage temperature ? pulse width = 0.1msec, duty ratio 1%
SIR-563ST3F sensors 2/3 ! ! ! ! electrical and optical characteristics (ta = 25 c) parameter symbol p o i e f c i r v f ? p 1 / 2 trtf min. ? 9.0 ? ? ? ? ? ? ? typ. 11 21 1.34 ? 940 40 15 1.0 1.0 max. ? 1.6 ? 10 ? ? ? ? ? unit mw mw/sr i f = 50ma i f = 50ma i f = 50ma v r = 3v i f = 50ma i f = 50ma i f = 50ma i f = 50ma i f = 50ma a nm nm v deg mhz s conditions optical output emitting strength forward voltage reverse current peak light emitting wavelength spectral line half width half-viewing angle pesponse time cut-off frequency ! ! ! ! electrical and optical characteristic curves fig.1 forward current forward current : i f (ma) ambient temperature : ta ( c) 20 0 406080100 0 20 40 60 80 100 forward voltage : v f (v) forward current : i f (ma) 0 20 40 60 80 100 012 75 c 50 c 25 c 0 c ? 25 c fig.2 forward current vs. forward voltage fig.3 wavelength relative optical output : p o (%) optical wavelength : (nm) 920 900 940 960 980 0 20 40 60 80 100 fig.4 emitting strength vs. forward current emitting strength : i e (mw/sr) forward current : i f (ma) 20 0 406080100 0 10 20 30 40 50 ? 25 100 75 50 25 0 10 20 50 100 200 relative emitting strength : i e (%) ambient temperature : ta ( c) fig.5 relative emitting strength vs. ambient temperature
SIR-563ST3F sensors 3/3 0 100 80 60 40 20 20 40 60 80 100 relative emitting strength (%) angular displacement : (deg) relative emitting strength (%) 10 20 30 40 50 60 70 80 90 10 0 20 30 40 50 60 70 80 90 fig.6 directional pattern
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